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Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces. Time-resolved and excitation-dependent photoluminescence study of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy. Optical enhancement of the open-circuit voltage in high quality GaAs solar cells. Optical investigation of confinement and strain effects in CdTe/(CdMg)Te quantum wells. CdTe/MgTe heterostructures: growth by atomic layer epitaxy and determination of MgTe parameters. Carrier lifetimes and interface recombination velocities in CdTe/MgxCd1-xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy. Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy. Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy. CdTe solar cells at the threshold to 20% efficiency. Influence of Cds/CdTe interface properties on the device properties. CdTe solar cells with open-circuit voltage greater than 1 V. High efficiency indium oxide/cadmium telluride solar cells. Minority carrier lifetime analysis in the bulk of thin-film absorbers using subbandgap (two-photon) excitation. Research strategies toward improving thin-film CdTe photovoltaic devices beyond 20% conversion efficiency. 27.6% conversion efficiency, a new record for single-junction solar cells under 1 sun illumination. Enhanced p-type dopability of P and As in CdTe using non-equilibrium thermal processing. Optical Constants of Crystalline and Amorphous Semiconductors: Numerical Data and Graphical Information (Springer, 1999) Solar cell efficiency tables (version 47). Green, M. A., Emery, K., Hishikawa, Y., Warta, W. The cells thus have a low open-circuit voltage ( V oc) of 0.876 V compared to a detailed-balance V oc of 1.23 V this is largely responsible for the relatively low efficiency of CdTe cells 5. Furthermore, existing CdTe cell structures do not have a wide-bandgap material that can both provide carrier confinement and also offer a low interface recombination velocity (IRV) 1. Indeed, the record Si and GaAs cells have monocrystalline absorbers with wide-bandgap barrier/passivating layers at the absorber interfaces 4, whereas the record CdTe cell has a polycrystalline absorber. However, the efficiency of the best CdTe cell is only 67% that of its detailed-balance limit owing to excessive non-radiative recombination 1 and the difficulty in forming hole contacts by p-type doping 3. Like Si and GaAs, CdTe has a near optimum bandgap and a high absorption coefficient near the band edge, and is thus an excellent material for photovoltaic technology 2. Silicon and GaAs solar cells have recently been demonstrated with efficiencies that are 87% of their respective detailed-balance limits 1.